Strain relaxation and defect reduction in InxGa1−xAs/GaAs by lateral oxidation of an underlying AlGaAs layer
| Publication | Article in Journal of Applied Physics, published December 2000 |
|---|---|
| Authors | K. L. Chang, J. H. Epple, G. W. Pickrell, H. C. Lin, K. Y. Cheng, K. C. Hsieh |
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