Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter
Publication | Article in Applied Physics Letters, published July 2005 |
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Authors | Yasuhiro Oda, Haruki Yokoyama, Kenji Kurishima, Takashi Kobayashi, Noriyuki Watanabe, Masahiro...[ show more ] |
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