Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric
| Publication | Article in Applied Physics Letters, published May 2008 |
|---|---|
| Authors | D. Shahrjerdi, T. Akyol, M. Ramon, D. I. Garcia-Gutierrez, E. Tutuc, S. K. Banerjee |
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