High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics
| Publication | Article in Journal of Applied Physics, published April 2015 |
|---|---|
| Authors | Haolei Qian, Yewu Wang, Yanjun Fang, Lin Gu, Ren Lu, Jian Sha |
This is the public page for a publication record in Dimensions, a free research insights platform that brings together information about funding, scholarly outputs, policy, patents and grants.
Loading metrics…