InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge
| Publication | Article in Applied Physics Letters, published October 2015 |
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| Authors | M. S. Aksenov, A. Yu. Kokhanovskii, P. A. Polovodov, S. F. Devyatova, V. A. Golyashov, A. S....[ show more ] |
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