New characterization method of ion current-density profile based on damage distribution of Ga+ focused-ion beam implantation in GaAs
| Publication | Article in Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, published November 1993 |
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| Authors | G. Ben Assayag, C. Vieu, J. Gierak, P. Sudraud, A. Corbin |
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