Fabrication and Characterization of nMOS Inverters Utilizing Quantum Dot Gate Field Effect Transistor (QDGFET) for SRAM Device
| Publication | Article in Selected Topics in Electronics and Systems, published December 2022 |
|---|---|
| Authors | Bilal Khan, Roman Mays, Raja Gudlavalleti, Faquir Jain |
This is the public page for a publication record in Dimensions, a free research insights platform that brings together information about funding, scholarly outputs, policy, patents and grants.
Loading metrics…