6H- AND 4H-SiC(0001) Si SURFACE RICHNESS DOSING BY HYDROGEN ETCHING: A WAY TO REDUCE THE FORMATION TEMPERATURE OF RECONSTRUCTIONS
| Publication | Article in Surface Review and Letters, published February 2003 |
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| Authors | M. DIANI, J. DIOURI, L. KUBLER, L. SIMON, D. AUBEL, D. BOLMONT |
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