Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN
| Publication | Article in Journal of Applied Crystallography, published June 2015 |
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| Authors | S. Bauer, S. Lazarev, M. Bauer, T. Meisch, M. Caliebe, V. Holy, F. Scholz, T. Baumbach |
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