Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction
| Publication | Article in Journal of Physics Condensed Matter, published September 2021 |
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| Authors | U K Das, R Theisen, A Hua, A Upadhyaya, I Lam, T K Mouri, N Jiang, D Hauschild, L Weinhardt, W...[ show more ] |
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